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High k Gate Dielectrics (Materials Science and Engineering) by Michael Houssa

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Published by Taylor & Francis .
Written in English

Subjects:

  • Electricity, magnetism & electromagnetism,
  • Electronic devices & materials,
  • Technology,
  • Science,
  • Science/Mathematics,
  • Engineering - Electrical & Electronic,
  • Material Science,
  • Solid State Physics,
  • Technology / Material Science,
  • Electronics - General

Book details:

The Physical Object
FormatHardcover
Number of Pages614
ID Numbers
Open LibraryOL7971162M
ISBN 100750309067
ISBN 109780750309066

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: High-k Gate Dielectrics for CMOS Technology (): Gang He, Zhaoqi Sun: Books. DOI link for High k Gate Dielectrics. High k Gate Dielectrics book. High k Gate Dielectrics. DOI link for High k Gate Dielectrics. High k Gate Dielectrics book. Edited By Michel Houssa. Numerous recent works have indeed reported leakage current reductions in high-κ based MOS devices, as compared to SiO 2 layers with equivalent electrical Author: Michel Houssa. High k Gate Dielectrics - CRC Press Book The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. High-k Gate Dielectrics for CMOS Technology A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions.

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their. "High-K Gate Dielectrics is a timely review of this rapidly evolving research field. The individual chapters provide a complete, in-depth coverage of current understanding, making the book an excellent source of reference for researchers in High-K gate dielectrics and newcomers to the field. Topics include: an extensive review of Moore's Law, the classical regime for SiO 2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate. For dielectrics with K > 15 and gate power. mW/cm/sup 2/, it may be necessary to stabilize the amorphous phase of metal oxides by adding Al or Si into the oxide; and thus forming multi-component dielectrics such as aluminates or silicates. At present, the most critical issue facing the high K research is the reduced mobility and therefore.

Such films that enable scaling include those in the high-k gate stack to minimize leakage, channel materials, and stressors for mobility enhancement, metals in the back end for low-resistance interconnects, and low-k dielectrics to minimize parasitic capacitance. Chemical vapor deposition (CVD) is routinely utilized to deposit all the. Abstract: The potential impact of high-/spl kappa/ gate dielectrics on device short-channel performance is studied over a wide range of dielectric permittivities using a two-dimensional (2-D) simulator implemented with quantum mechanical models. It is found that the short-channel performance degradation is caused by the fringing fields from the gate to the source/drain by: High-κ dielectrics and vertical-channel transistors. Gate oxide scaling has become the key in scaling silicon CMOS technology. The metal gate and high-κ dielectric are very attractive to maintain low gate leakage and control SCEs [27, 63]. gate dielectric material for sub mm complementary metal–oxide–semiconductor ~CMOS! technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are ~a! permittivity, band gap, and band alignment to silicon, ~b! thermodynamic stability.